1
.: 074968-0011
PATENT
IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
In re Application of
Customer Number: 20277
Tetsuzo UEDA, et al.
Confirmation Number: 1 264
Application No.: 10/812,416
Group Art Unit: 2811
Filed: March 30, 2004
Examiner: Crane, Sara W.
For: A 4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-
POLYTYPE SUBSTRATE
Mail Stop Amendment
Commissioner for Patents
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Dear Sir:
In accordance with the provisions of 37 C.F.R. 1.56, 1.97 and 1.98, the attention of the
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1449. It is respectfully requested that the documents be expressly considered during the prosecution
of this application, and that the documents be made of record therein and appear among the
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INFORMATION DISCLOSURE STATEMENT
No. 500417.
88/29/2806 SDENB0B1 88888152 580417 18812416
81 FC:1886 188.08 Dfl
10/812,416
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as ou
our Customer No. 20277
ence address.
2
SHEET 1 OF 1
TION DISCLOSURE
CITATION IN AN
APPLICATION
(PTO-1449)
ATTY. DOCKET NO.
074968-0011
SERIAL NO.
10/812,416
APPLICANT
Tetsuzo UEDA, et al.
FILING DATE
March 30, 2004
GROUP
2811
U.S. PATENT DOCUMENTS
EXAMINER'S
INITIALS
CITE
NO.
Document Number
Number-Kind Code2<jr known;
Publication Date
MM-DD-YYYY
Name of Patentee or Applicant of Cited
Document
Pages, Columns, Lines, Where
Relevant Passages or Relevant
Figures Appear
US
US
US
US
US
US
US
US
US
US
US
US
US
US
FOREIGN PATENT DOCUMENTS
EXAMINER'S
INITIALS
CITE
NO.
Foreign Patent Document
Country Codea -Number 4 -Kind
Codes (// known)
Publication Date
MM-DD-YYYY
Name of Patentee or
Applicant of Cited Document
Pages, Columns, Lines
Where Relevant
Figures Appear
Translation
Yes No
JP 8-125275
05-17-1996
SANYO ELECTRIC CO.
LTD.
Japan (w/
English
Abstract)
OTHER ART (Including Author, Title, Date, Pertinent Pages, Etc.)
EXAMINER'S
INITIALS
CITE
NO.
Include name of the author (in CAPITAL LETTERS), title of the article (when appropriate), title of the item (book, magazine,
journal, serial, symposium, catalog, etc.), date, page(s), volume-issue number(s), publisher, city and/or country where
published.
N. Kuroda et al., "Step - Controlled VPE Growth of SiC Single Crystals at LowTemperatures"
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp.
227-230
EXAMINER
DATE CONSIDERED
"EXAMINER: Initial if reference considered, whether or not citation is in conformance with MPEP 609. Draw line through citation if not in conformance and not considered.
Include copy of this form with next communication to applicant.
1 Applicant's unique citation designation number (optional). 2 Applicant is to place a check mark here if English language Translation is attached.
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